Giorgio Ferrari received the Master degree and the Ph.D. degree from Politecnico di Milano in Electronics Engineering in 1999 and 2003, respectively. In the 2001 he has carried out part of the research activity in STMicroelectronics (Fremont, USA) on the developing of a high-speed sense amplifier for flash memories. From 2002 to 2003 he held a grant in the MDM Laboratory of Italian Institute for the Physics of Matter (Agrate Brianza, Italy) where he studied theoretical and experimental aspects to detect single electron spin resonance effects on the random telegraph noise of silicon MOSFETdevices. In 2005, he joined the Department of Electronics Engineering of Politecnico di Milano as Assistant Professor.
