Dimitri A. Antoniadis, Ph.D. is a Professor of Electrical Engineering at Massachusetts Institute of Technology (MIT).His initial research activities were in the area of measurement and modeling of the earth's ionosphere and thermosphere ranging from instrument design to computer simulation. Dr. Antoniadis serves as Director of the multi-university ... Focus Research Center for Materials Structures and Devices centered at MIT. He serves as a Member of the Advisory Board of Nantero, Inc. He served as a Director of Ibis Technology Corp., from 1996 to February 2009. He Co-founded and served as First Director of the MIT Micro- systems Technology Laboratories. He also served as Director of SRC MIT Center of Excellence for Microsystems Technology from 1993 to 2000. He led the development of the first two generations of the SUPREM process simulator, and since then his technical activity has been in the area of semiconductor devices and integrated circuit technology. He worked on the physics of diffusion in silicon, thin-film technology and devices, and quantum-effect semiconductor devices. His current research focuses on the physics and technology of extreme-submicron Si, SOI and Si/SiGe MOSFETs. Dr. Antoniadis is the recipient of the Solid State Science and Technology Young Author Award of the Electrochemical Society in 1979, the Paul Rappaport Award of the IEEE in 1998, and the 2002 Andrew Grove Award of the IEEE. Dr. Antoniadis has been a Fellow of the IEEE since 1986. Dr. Antoniadis received his B.S. in Physics from the National University of Athens in 1970 and his Ph.D. in Electrical Engineering in 1976 from Stanford University.
